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2PG011 - Silicon N-Channel Enhancement IGBT

Features

  • s.
  • Low collector-emitter saturation voltage: VCE(sat) < 2.5 V.
  • High-speed switching: tf = 185 ns (typ. ).
  • Package.
  • Code TO-220D-A1.
  • Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
  • Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note).
  • : Assurance of repetitive pulse. (Repetitive period.

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Datasheet Details

Part number 2PG011
Manufacturer Panasonic
File Size 465.69 KB
Description Silicon N-Channel Enhancement IGBT
Datasheet download datasheet 2PG011 Datasheet

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Full PDF Text Transcription

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)  Package  Code TO-220D-A1  Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively. T ≤ 5.
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