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2PG401 - Insulated Gate Bipolar Transistor

Features

  • q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package 7.2±0.3 0.8±0.2 unit: mm 7.0±0.3 3.0±0.2 3.5±0.2 s.

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Datasheet Details

Part number 2PG401
Manufacturer Panasonic
File Size 22.05 KB
Description Insulated Gate Bipolar Transistor
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2PG402 Insulated Gate Bipolar Transistor

Full PDF Text Transcription

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IGBTs 2PG401 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package 7.2±0.3 0.8±0.2 unit: mm 7.0±0.3 3.0±0.2 3.5±0.2 s Applications q For flash-light for use in a camera 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 s Absolute Maximum Ratings (TC = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 15 1.3 150 −55 to +150 Unit V V A A W °C °C 1 4.6±0.4 2 3 10.0 –0. +0.3 0.75±0.1 2.3±0.
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