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XN0A312 - Composite Transistor

Features

  • s e.
  • Two elements incorporated into one package e tag (Transistors with built-in resistor) s.
  • Reduction of the mounting area and assembly cost by one half 0.4±0.2 1.50.
  • +00..0255 2.8.
  • +00..32 5˚ c cle.
  • Basic Part Number n d cy.
  • UNR2212 (UN2212) + UNR2112 (UN2112) (0.65) 1.1.
  • +00..12 1.1.
  • +00..13 a e t life.
  • Absolute Maximum Ratings Ta = 25°C uc Parameter Symbol Rating Unit n u rod Tr1 Collector-base voltage VCBO 50 V.

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Full PDF Text Transcription

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This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors XN0A312 (XN1A312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits / ■ Features e. • Two elements incorporated into one package e tag (Transistors with built-in resistor) s • Reduction of the mounting area and assembly cost by one half 0.4±0.2 1.50–+00..0255 2.8–+00..32 5˚ c cle ■ Basic Part Number n d cy • UNR2212 (UN2212) + UNR2112 (UN2112) (0.65) 1.1–+00..12 1.1–+00..13 a e t life ■ Absolute Maximum Ratings Ta = 25°C uc Parameter Symbol Rating Unit n u rod Tr1 Collector-base voltage VCBO 50 V P (Emitter open) te tin ur . Collector-emitter voltage VCEO 50 0 to 0.
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