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XN02501 - Silicon NPN epitaxial planer transistor

Features

  • 1 Composite Transistors PT.
  • Ta 500 60 Ta=25˚C IB=160µA XN2501 IC.
  • VCE 1200 VCE=10V Ta=25˚C 1000 IB.
  • VBE Total power dissipation PT (mW) Collector current IC (mA) 400 50 40 120µA 100µA Base current IB (µA) 140µA 800 300 30 80µA 20 60µA 40µA 10 20µA 600 200 400 100 200 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC.
  • VBE 240 VCE.

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Datasheet Details

Part number XN02501
Manufacturer Panasonic
File Size 33.45 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN02501 Datasheet

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Full PDF Text Transcription

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Composite Transistors XN2501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Base-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SD601A × 2 elements 0.8 s Basic Part Number of Element +0.
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