Datasheet4U Logo Datasheet4U.com

XN01558 - Silicon NPN Transistor

Features

  • Two elements incorporated into one package (Emitter-coupled transistors).
  • Reduction of the mounting area and assembly cost by one half 2 0.30+0.10.
  • 0.05 10˚ 1.
  • Basic Part Number.
  • 2SD2623 × 2 1.1+0.2.
  • 0.1 (0.65).
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junct.

📥 Download Datasheet

Datasheet Details

Part number XN01558
Manufacturer Panasonic
File Size 203.89 KB
Description Silicon NPN Transistor
Datasheet download datasheet XN01558 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XN0NE92 Silicon P-channel MOSFET Panasonic

Other Datasheets by Panasonic

Part Number Description
XN01501 Silicon NPN Transistor
XN01504 Silicon NPN Transistor
XN01110 Silicon PNP epitaxial planer transistor
XN01112 Silicon PNP Transistor
XN01114 Silicon PNP epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Composite Transistors XN01558 Silicon NPN epitaxial planar type For low-frequency amplification 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number • 2SD2623 × 2 1.1+0.2 –0.1 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 25 20 12 0.
Published: |