Datasheet4U Logo Datasheet4U.com

PNZ7103 - Bipolar Integrated Circuit with Photodetection Function

Features

  • Built-in amplifier circuit Small plastic package (flat type) 12.5 min. 10 min. 3-0.45±0.2 0.45±0.2 Absolute Maximum Ratings (Ta = 25˚C) 1.27 1.27 Parameter Power supply voltage Operating supply voltage sensitivity Power dissipation Operating ambient temperature Storage temperature Symbol VCC VC PD Topr Tstg Ratings +15 +3.0 to +3.5 100.
  • 25 to +85.
  • 40 to +100 Unit V mW ˚C ˚C 1 2 3 1: GND 2: VOUT 3: VCC Electro-Optical Characteristics (VCC = 3.2V, RL = 5.1kΩ, Ta = 25˚C ± 3.

📥 Download Datasheet

Datasheet Details

Part number PNZ7103
Manufacturer Panasonic
File Size 29.89 KB
Description Bipolar Integrated Circuit with Photodetection Function
Datasheet download datasheet PNZ7103 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PNZ154 Silicon planar type Phototransistors Panasonic

Other Datasheets by Panasonic

Part Number Description
PNZ0300 Silicon PIN Photodiodes
PNZ102F Silicon NPN Phototransistors
PNZ107F Silicon NPN Phototransistors
PNZ108CL Silicon NPN Phototransistor
PNZ108F Silicon NPN Phototransistors

Full PDF Text Transcription

Click to expand full text
Photo IC PNZ7103 Bipolar Integrated Circuit with Photodetection Function Unit : mm 1.5±0.2 For photoelectric sensor systems Features Built-in amplifier circuit Small plastic package (flat type) 12.5 min. 10 min. 3-0.45±0.2 0.45±0.2 Absolute Maximum Ratings (Ta = 25˚C) 1.27 1.27 Parameter Power supply voltage Operating supply voltage sensitivity Power dissipation Operating ambient temperature Storage temperature Symbol VCC VC PD Topr Tstg Ratings +15 +3.0 to +3.5 100 –25 to +85 – 40 to +100 Unit V mW ˚C ˚C 1 2 3 1: GND 2: VOUT 3: VCC Electro-Optical Characteristics (VCC = 3.2V, RL = 5.
Published: |