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Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 (1.5) 2.54 1.7
For optical control systems Features
Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 22 deg. (typ.) Transparent epoxy resin package
ø3.8±0.2 ø3.0±0.2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 190 100 1 3 –25 to +85 –30 to +100
Unit mW mA A V ˚C ˚C
1.0
15.0±1.0 4.5±0.3
5.0±0.2 0.6
1
2
1: Anode 2: Cathode
f = 100Hz, Duty cycle = 0.
LNA4801L Datasheet
