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K2572. For precise diagrams, and layout, please refer to the original PDF.
Power F-MOS FETs 2SK2572 2SK2572(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 15.5±0.5 3.0±0.3 energy capability guaranteed 4.5 q High-speed ...
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t : mm 15.5±0.5 3.0±0.3 energy capability guaranteed 4.5 q High-speed q Low q No switching ø3.2±0.1 10.0 26.5±0.5 ON-resistance 5˚ 5˚ 2.0 1.2 secondary breakdown 4.0 2.0±0.2 1.1±0.1 2.0 q Non-contact q Solenoid q Motor relay 18.6±0.5 s Applications drive 5˚ 5˚ 5˚ 0.7±0.1 5.45±0.3 5.45±0.3 3.3±0.3 0.7±0.1 q Control equipment mode regulator 5˚ q Switching 1 2 3 2.0 5.5±0.3 drive s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 500 ±20 ±15 ±30 11.
K2572 Datasheet
