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K2538. For precise diagrams, and layout, please refer to the original PDF.
Power F-MOS FETs 2SK2538 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q No secondary breakdown s Applications ...
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anteed q High-speed switching q No secondary breakdown s Applications q High-speed switching (switching mode regulator) q For high-frequency power amplification s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability Allowable power dissipation TC= 25˚C Ta= 25˚C Channel temperature Storage temperature Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 250 ±30 ±2 ±4 10 30 2 150 –55 to +150 * L= 5mH, IL= 2A, VDD= 30V, 1 pulse Unit V V A A mJ W ˚C ˚C s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-
K2538 Datasheet
