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2SB945 - Power Transistors

Download the 2SB945 datasheet PDF. This datasheet also covers the 2SB0945 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Large collector current IC.
  • Full-pack package which can be installed to the heat sink with one screw. 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2.
  • 0.1.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB0945_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB0945 (2SB945) www.DataSheet4U.net Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw. 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.
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