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2SB945 - Silicon PNP Power Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A Good Linearity of hFE Large Collector Current IC Complement to Type 2SD1270 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching appl

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB945 isc website：www.iscsemi.
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