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Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD958
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –120 –120 –7 –50 –20 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
2.5
2.
2SB788 Datasheet
