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2SB786 - PNP Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switchi

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB786 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.
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