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2SB0949 - Power Transistors

Key Features

  • ±0.1 Solder Dip (4.0) 14.0±0.5.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating.
  • 60.
  • 80.
  • 60.
  • 80.
  • 5.
  • 2.
  • 4 35 2 150.
  • 55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2.
  • 0.1 0.8±0.1 2.54±0.3 5.08±0.5 Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Emitter-base voltage (Collector open) Collector.

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Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington 4.2±0.2 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 For power amplification and switching Complementary to 2SD1275 and 2SD1275A • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 ■ Features φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −2 −4 35 2 150 −55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.