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Power Transistors
2SB0942 (2SB942), 2SB0942A (2SB942A)
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Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD1267, 2SD1267A ■ Features
16.7±0.3 0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
• High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw
7.5±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0942 2SB0942A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150 °C °C V A A W
1 2 3
Unit V
Solder Dip (4.0) 14.0±0.5
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
0.8±0.