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2SB0948 - Power Transistors

Key Features

  • s 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2.
  • Low collector-emitter saturation voltage VCE(sat).
  • High-speed switching.
  • Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 φ 3.1±0.1.
  • Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) 2SB0948 2SB0948A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature VCBO.
  • 40.
  • 50.
  • 20.
  • 40.

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Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) 2SB0948 2SB0948A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature VCBO −40 −50 −20 −40 −5 −10 −20 40 2 150 −55 to +150 °C °C V A A W 1 2 3 V Solder Dip (4.0) Parameter Symbol Rating Unit 14.0±0.5 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.