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2SB0939 - Power Transistors

Key Features

  • 0.4 Publication date: March 2003 SJD00020BED 1 2SB0939, 2SB0939A PC  Ta 50 (1).
  • 8 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) TC=25˚C IC  VCE Collector-emitter saturation voltage VCE(sat) (V).
  • 100 VCE(sat)  IC IC/IB=500 Collector power dissipation PC (W) 40 Collector current IC (A).
  • 6 30 IB=.
  • 2.0mA.
  • 1.8mA.
  • 1.6mA.
  • 1.4mA.
  • 1.2mA.
  • 1.0mA.
  • 0.8mA.
  • 0.6mA.

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Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262, 2SD1262A 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 Collector-base voltage (Emitter open) 2SB0939 2SB0939A VCBO VCEO VEBO IC ICP PC −60 −80 −60 −80 −7 −8 −12 45 1.3 V (6.5) Collector-emitter voltage 2SB0939 (Base open) 2SB0939A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature V V A A W B °C °C E 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared.