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2SB0932 - Power Transistors

Key Features

  • ±0.5 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating.
  • 130.
  • 80.
  • 7.
  • 4.
  • 8 35 1.3 150.
  • 55 to +150 Unit V (6.5) V V A A W °C °C 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package i.

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Power Transistors 2SB0932 (2SB932) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 Unit: mm • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 ■ Features 4.4±0.5 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −130 −80 −7 −4 −8 35 1.