The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SB0938 (2SB938), 2SB0938A (2SB938A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features
• High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
Unit: mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
4.4±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0938 2SB0938A VCEO VEBO IC ICP PC Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 °C °C V A A W V Unit V
(6.