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Transistor
2SA1982
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC5346
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05
0.7
4.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. (Ta=25˚C)
Ratings –150 –150 –5 –100 –50
*
0.65 max.
1.0 1.0
0.2
0.45–0.05
+0.1
+0.1
2.5±0.5
2.5±0.
2SA1982 Datasheet
