2SA1816 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q
High collector to emitter voltage VCEO. 15.6±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
0.7±0.1
Ratings.
150.
150.
5.
100.
50 300 150.
55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3.
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Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
4.0±0.2
3.0±0.2
Unit: mm
s Features
q
High collector to emitter voltage VCEO.
15.6±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
0.7±0.1
Ratings –150 –150 –5 –100 –50 300 150 –55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.
2SA1816 Datasheet