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HL7852G - GaA1As Laser Diode

Description

The HL7852G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure.

It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment.

Hermetic sealing of the package assures high reliability.

Features

  • Visible light output: λp = 785 nm Typ.
  • Small beam ellipticity: 9.5:23 www. DataSheet4U. com.
  • High output power: 50 mW (CW).
  • Built-in monitor photodiode Package Type.
  • HL7852G: G2 Internal Circuit 1 3 PD LD 2 Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Symbol PO PO(pulse) VR(LD) VR(PD) Topr Ratings 50 60.
  • 2 30.
  • 10 to +60.
  • 4.

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Datasheet Details

Part number HL7852G
Manufacturer Opnext
File Size 121.12 KB
Description GaA1As Laser Diode
Datasheet download datasheet HL7852G Datasheet

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Full PDF Text Transcription

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HL7852G GaAlAs Laser Diode Description The HL7852G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. ODE-208-063A (Z) Rev.1 Dec. 04, 2006 Features • Visible light output: λp = 785 nm Typ • Small beam ellipticity: 9.5:23 www.DataSheet4U.
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