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HL7851G - GaAlAs Laser Diode

Description

www.DataSheet4U.com structure.

optical equipment.

Hermetic sealing of the package assures high reliability.

Features

  • Visible light output: λp = 785 nm Typ Small beam ellipticity: 9.5:23 High output power: 50 mW (CW) Built-in monitor photodiode 173 HL7851G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 50 60.
  • 2 30.
  • 10 to +60.
  • 40 to +85 1 Unit mW mW V V °C °C 1. Ma.

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Full PDF Text Transcription

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HL7851G GaAlAs Laser Diode Description www.DataSheet4U.com structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. The HL7851G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) Features • • • • Visible light output: λp = 785 nm Typ Small beam ellipticity: 9.5:23 High output power: 50 mW (CW) Built-in monitor photodiode 173 HL7851G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 50 60* 2 30 –10 to +60 –40 to +85 1 Unit mW mW V V °C °C 1.
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