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SBC847CDXV6T1G - Dual General Purpose Transistors

Features

  • AEC.
  • Q101 Qualified and PPAP Capable.
  • S Prefix for Automotive and Other.

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Datasheet Details

Part number SBC847CDXV6T1G
Manufacturer onsemi
File Size 123.95 KB
Description Dual General Purpose Transistors
Datasheet download datasheet SBC847CDXV6T1G Datasheet
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Full PDF Text Transcription

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BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol BC847 BC848 Unit Collector − Emitter Voltage VCEO 45 30 V Collector − Base Voltage VCBO 50 30 V Emitter − Base Voltage VEBO 6.0 5.0 V Collector Current − Continuous IC 100 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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