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SBC817-16/25/40 NPN General Purpose Transistors
FEATURES
l High Current l Low Voltage l General Purpose Switching and Amplification
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Value 45 50 5.0 500
Unit V V V
mAdc
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit
225 mW 1.8 mW/°C 556 °C/W
300 2.
SBC817-16 Datasheet
