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NTJD4001N, NVTJD4001N
MOSFET – Dual, N-Channel, Small Signal, SC-88
30 V, 250 mA
Features
• Low Gate Charge for Fast Switching • Small Footprint − 30% Smaller than TSOP−6 • ESD Protected Gate • AEC Q101 Qualified − NVTJD4001N • These Devices are Pb−Free and are RoHS Compliant
Applications
• Low Side Load Switch • Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC • Buck Converters • Level Shifts
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25 °C State
TA = 85 °C Steady TA = 25 °C State
VDSS VGS ID
PD
30
V
±20
V
250 mA
180
272 mW
Pulsed Drain Current
t =10 ms
IDM
600 mA
Operating Junction and Storage Temperatur
NVTJD4001N Datasheet
