• Part: NVT2023N065M3S
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 175.66 KB
Download NVT2023N065M3S Datasheet PDF
onsemi
NVT2023N065M3S
Features - Typ. RDS(on) = 23 m W @ VGS = 18 V - Low Effective Output Capacitance - Ultra Low Gate Charge - 100% UIS Tested - Qualified According to AECQ101 - This Device is Halide Free and Ro HS pliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Applications - Automotive On and Off Board Charger - Automotive DC-DC Converter for EV-HEV MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS Gate-to-Source Voltage - 8/+22 V Continuous Drain Current TC = 25 °C Power Dissipation 288 W Continuous Drain Current TC = 100 °C Power Dissipation 144 W Pulsed Drain Current (Note 1) TC = 25 °C IDM tp = 100 ms Continuous Source-Drain Current (Body Diode) TC = 25 °C VGS = - 3...