Click to expand full text
DATA SHEET www.onsemi.com
MOSFET - Power, Single
P-Channel
-40 V, 9.5 mW, -77 A
NVMFS9D6P04M8L
Features
• Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS9D6P04M8L − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 4)
Power Dissipation RqJC (Notes 1, 2)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
−77.0 A
−54.