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MOSFET – Power, Single N-Channel
100 V, 23 mW, 31 A
NVMFS021N10MCL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS021N10MCL − Wettable Flank Option for Enhanced
Optical Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
31
A
22
Power Dissipation RqJC (Note 1)
Continuous Drain Current RqJA (Notes 1, 2, 3)
TC = 25°C
PD
TC = 100°C
Steady TA = 25°C
ID
State
TA =
NVMFS021N10MCL Datasheet
