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NVHL080N120SC1 - N-Channel Silicon Carbide MOSFET

Features

  • Typ. RDS(on) = 80 mW.
  • Ultra Low Gate Charge (typ. QG(tot) = 56 nC).
  • Low Effective Output Capacitance (typ. Coss = 80 pF).
  • 100% UIL Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Datasheet Details

Part number NVHL080N120SC1
Manufacturer onsemi
File Size 358.16 KB
Description N-Channel Silicon Carbide MOSFET
Datasheet download datasheet NVHL080N120SC1 Datasheet

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Full PDF Text Transcription

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ.
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