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NVHL065N65S3F - N-Channel MOSFET

Features

  • Ultra Low Gate Charge & Low Effective Output Capacitance.
  • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS).
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Single N-Channel, SUPERFET) III, FRFET) 650 V, 46 A, 65 mW NVHL065N65S3F Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS Gate−to−Source Voltage − DC VGSS Gate−to−Source Voltage − AC (f > 1 Hz) VGSS Drain Current − Continuous (TC = 25°C) ID Drain Current − Continuous (TC = 100°C) ID Drain Current − Pulsed (Note 3) IDM Power Dissipation (TC = 25°C) PD Power Dissipation − Derate Above 25°C PD Operating Junction and Storage Temperature Range TJ, TSTG 650 ±30 ±30 46 30 115 337 2.
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