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NUS5531MT Main Switch Power MOSFET and Single Charging BJT
−12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package
This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery−powered portable electronics.
Features
V(BR)DSS −12 V
http://onsemi.com MOSFET
RDS(on) TYP 32 mW @ −4.5 V 44 mW @ −2.5 V ID MAX −6.2 A
Low Vce(sat) PNP (Wall/USB)
VCEO MAX −20 V VEBO MAX −7.0 V IC MAX −2.0 A
• • • • • •
High Performance Power MOSFET Single Low Vce(sat) Transistor as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin−out Provides Circuit Flexibility Low Profile (<0.
NUS5531MT Datasheet
