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NUS5530MN
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
Features
• Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package • This is a Pb−Free Device
Applications
• Power Management in Portable and Battery−Powered Products; i.e.
NUS5530MN Datasheet
