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NTTFS4H05N
MOSFET – Power, Single, N-Channel, m8-FL
25 V, 94 A
Features
• Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) Power Dissipation RqJA (TA = 25°C, Note 1)
VDSS
25
V
VGS
±20
V
ID
22.4
A
PD
2.
NTTFS4H05N Datasheet
