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NTTFS4800N
Power MOSFET
30 V, 32 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • Point of Load • Power Load Switch • Notebook Battery Management • Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20 V
Continuous Drain Current RqJA (Note 1)
TA = 25°C
ID
TA = 85°C
8.3
A
6.0
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
2.2 W
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
TA = 85°C
11.8 A 8.
NTTFS4800N Datasheet
