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NTTFS4C25N - Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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NTTFS4C25N MOSFET – Power, Single, N-Channel, m8FL 30 V, 27 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 7.7 A TA = 85°C 5.8 TA = 25°C PD 1.63 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 12.2 A TA = 85°C 9.
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