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MOSFET - Power, Single N-Channel, m8FL
30 V, 67 A
NTTFS4C06N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • Power Load Switch • Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
18
A
TA = 85°C
13
TA = 25°C
PD
2.16 W
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
25.6 A
TA = 85°C
18.