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NTTFS4C06N - N-Channel Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number NTTFS4C06N
Manufacturer onsemi
File Size 190.23 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NTTFS4C06N Datasheet

Full PDF Text Transcription

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MOSFET - Power, Single N-Channel, m8FL 30 V, 67 A NTTFS4C06N Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 18 A TA = 85°C 13 TA = 25°C PD 2.16 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 25.6 A TA = 85°C 18.
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