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NTTFS4C10N
MOSFET – Power, Single,
N-Channel, m8FL
30 V, 44 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • Power Load Switch • Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation (Note 1)
RqJA
TA = 25°C TA = 80°C TA = 25°C
VDSS VGS ID
PD
30 ±20 13.3 9.9 2.09
V V A
W
Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C ID 18.2 A
TA = 80°C
13.
NTTFS4C10N Datasheet
