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NTMSD3P303R2 - P-Channel Enhancement-Mode Power MOSFET and Schottky Diode

Features

  • High Efficiency Components in a Single SO.
  • 8 Package.
  • High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF.
  • Independent Pin.
  • Outs for MOSFET and Schottky Die Allowing for Flexibility in.

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Datasheet Details

Part number NTMSD3P303R2
Manufacturer onsemi
File Size 202.65 KB
Description P-Channel Enhancement-Mode Power MOSFET and Schottky Diode
Datasheet download datasheet NTMSD3P303R2 Datasheet

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Full PDF Text Transcription

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NTMSD3P303R2 FETKY™ P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use • Less Component Placement for Board Space Savings • SO−8 Surface Mount Package, Mounting Information for SO−8 Package Provided • Pb−Free Package is Available Applications • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery−Powered Products, i.e.
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