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NTMSD3P102R2 - P-Channel Enhancement-Mode Power MOSFET and Schottky Diode

Features

  • ăHigh Efficiency Components in a Single SO-8 Package.
  • ăHigh Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF.
  • ăIndependent Pin-Outs for MOSFET and Schottky Die Allowing for Flexibility in.

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Datasheet Details

Part number NTMSD3P102R2
Manufacturer onsemi
File Size 118.36 KB
Description P-Channel Enhancement-Mode Power MOSFET and Schottky Diode
Datasheet download datasheet NTMSD3P102R2 Datasheet

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Full PDF Text Transcription

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NTMSD3P102R2 FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use •ăLess Component Placement for Board Space Savings •ăSO-8 Surface Mount Package, Mounting Information for SO-8 Package Provided •ăPb-Free Packages are Available Applications •ăDC-DC Converters •ăLow Voltage Motor Control •ăPower Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted).
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