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NTMS4807N - Power MOSFET

Features

  • 30 V, 14.8 A, N-Channel, SO-8.
  • ăLow RDS(on) to Minimize Conduction Losses.
  • ăLow Capacitance to Minimize Driver Losses.
  • ăOptimized Gate Charge to Minimize Switching Losses.
  • ăThis is a Pb-Free Device.

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Full PDF Text Transcription

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NTMS4807N Power MOSFET Features 30 V, 14.8 A, N-Channel, SO-8 •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device Applications V(BR)DSS 30 V 7.5 mW @ 4.5 V www.DataSheet4U.com http://onsemi.com RDS(ON) MAX 6.1 mW @ 10 V 14.
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