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NTMS4802N - Power MOSFET

Features

  • www. DataSheet4U. com 30 V, 18 A, N.
  • Channel, SO.
  • 8.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb.
  • Free Device http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 4.0 mW @ 10 V 5.5 mW @ 4.5 V N.
  • Channel D ID MAX 18 A.

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Full PDF Text Transcription

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NTMS4802N Power MOSFET Features www.DataSheet4U.com 30 V, 18 A, N−Channel, SO−8 • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 4.0 mW @ 10 V 5.5 mW @ 4.
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