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MOSFET - Power, Single N-Channel, SO-8 FL
30 V, 46 A
NTMFS4C10N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
15.0
A
TA = 80°C
11.2
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
2.49 W
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
TA = 80°C
22.5
A
16.
NTMFS4C10N Datasheet
