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NTMD6601NR2G
Power MOSFET
80 V, 2.2 A, Dual N-Channel, SO-8
Features
•ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SO-8 Surface Mount Package Saves Board Space •ăThis is a Pb-Free Device
Applications
•ăLCD Displays
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA (Note 2)
Power Dissipation RqJA (Note 2)
Continuous Drain Current RqJA t < 5 s (Note 1)
TA = 25°C TA = 70°C TA = 25°C
Steady State
TA = 25°C TA = 70°C TA = 25°C
TA = 25°C TA = 70°C
VDSS VGS ID
PD ID
PD ID
80 ±15 1.4 1.2 1.0
1.1 0.9 0.
NTMD6601NR2G Datasheet
