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NTHD5905T1 - Power MOSFET

Features

  • Low RDS(on) for Higher Efficiency.
  • Logic Level Gate Drive.
  • Miniature ChipFET Surface Mount Package.

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Full PDF Text Transcription

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NTHD5905T1 Power MOSFET Dual P−Channel ChipFETt 3.0 Amps, 8 Volts Features • Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Applications • Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards http://onsemi.com DUAL P−CHANNEL 3.0 AMPS, 8 VOLTS RDS(on) = 90 mW MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 secs State Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) VDS −8.0 VGS "8.0 ID "4.1 "2.9 "3.0 "2.2 IDM "10 IS −1.8 −0.
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