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NTHD5903T1 - Power MOSFET

Features

  • Low RDS(on) for Higher Efficiency.
  • Logic Level Gate Drive.
  • Miniature ChipFET Surface Mount Package Saves Board Space.

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Full PDF Text Transcription

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NTHD5903T1 Power MOSFET Dual P-Channel ChipFETE 2.1 Amps, 20 Volts Features • Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Saves Board Space Applications http://onsemi.com • Power Management in Portable and Battery–Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards DUAL P–CHANNEL 2.1 AMPS, 20 VOLTS RDS(on) = 155 mW S1 S2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain–Source Voltage Gate–Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "2.9 "2.1 IDM IS PD 2.1 1.
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