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NTGD4169F - Power MOSFET and Schottky Diode

Features

  • 30 V, 2.9 A, N.
  • Channel with Schottky Barrier Diode, TSOP.
  • 6.
  • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb.
  • Free Device www. DataSheet4U. com http://onsemi. com N.

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Datasheet Details

Part number NTGD4169F
Manufacturer onsemi
File Size 158.30 KB
Description Power MOSFET and Schottky Diode
Datasheet download datasheet NTGD4169F Datasheet

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Full PDF Text Transcription

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NTGD4169F Power MOSFET and Schottky Diode Features 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device www.DataSheet4U.com http://onsemi.com N−CHANNEL MOSFET V(BR)DSS 30 V RDS(on) Max 90 mW @ 4.5 V 125 mW @ 2.5 V ID Max 2.6 A 2.2 A SCHOTTKY DIODE VR Max 30 V VF Max 0.53 V IF Max 1.
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