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NTGD4161P - Power MOSFET

Features

  • Fast Switching Speed Low Gate Charge Low RDS(on) Independently Connected Devices to Provide Design Flexibility This is a Pb.
  • Free Device http://onsemi. com V(BR)DSS.
  • 30 V RDS(on) Max 160 mW @.
  • 10 V 280 mW @.
  • 4.5 V.

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Full PDF Text Transcription

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NTGD4161P Power MOSFET −30 V, −2.3 A, Dual P−Channel, TSOP−6 Features • • • • • Fast Switching Speed Low Gate Charge Low RDS(on) Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com V(BR)DSS −30 V RDS(on) Max 160 mW @ −10 V 280 mW @ −4.
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