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NTGD3148N - Power MOSFET

Features

  • ăLow Threshold Levels, VGS(th) < 1.5 V.
  • ăLow Gate Charge (3.8 nC).
  • ăLeading Edge Trench Technology of Low RDS(on).
  • ăHigh Power and Current Handling Capability.
  • ăThis is a Pb-Free Device.

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Full PDF Text Transcription

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NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features •ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge Trench Technology of Low RDS(on) •ăHigh Power and Current Handling Capability •ăThis is a Pb-Free Device Applications http://onsemi.com N-CHANNEL MOSFET V(BR)DSS 20 V RDS(on) Max 70 mW @ 4.5 V 100 mW @ 2.5 V ID Max 3.
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