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NTD4969N - Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 19 mW @ 4.5 V D ID MAX 41 A.

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Full PDF Text Transcription

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NTD4969N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 19 mW @ 4.
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